Dan Denninghoff

A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch <inline-formula> <tex-math notation="LaTeX">$0.15~ {\mu }\text{m}$ </tex-math> </inline-formula> GaN-SiC Wafer Process Technology

K.W. Kobayashi, Dan Denninghoff, Dain Miller · IEEE Journal of Solid-State Circuits · 2016 · 78 citations

Electrical Engineering, Engineering, New Design +13

Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

Jing Lu, Xun Zheng, Matthew Guidry et al. · Applied Physics Letters · 2014 · 35 citations

Materials Science, Semiconductors, Electrical Engineering +15

N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒ<inf>max</inf>

Dan Denninghoff, Jing Lu, Matthew A. Laurent et al. · 2012 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +10

N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz f<inf>T</inf> and 405 GHz f<inf>max</inf>

Dan Denninghoff, Jing Lu, Elaheh Ahmadi et al. · 2013 · 27 citations

N-polar Gan/inaln/algan Mis-hemts, Wide-bandgap Semiconductor, Electrical Engineering +9

Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

Jing Lu, Dan Denninghoff, Ramya Yeluri et al. · Applied Physics Letters · 2013 · 24 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12