Xun Zheng

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Brian Romanczyk, Steven Wienecke, Matthew Guidry et al. · IEEE Transactions on Electron Devices · 2017 · 220 citations

Wide-bandgap Semiconductor, Electrical Engineering, Constant 8 +14

Demonstration of β-(Al<i>_x</i>Ga₁₋<i>_x</i>)₂O₃/β-Ga₂O₃modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng et al. · Applied Physics Express · 2017 · 206 citations

Semiconductors, Materials Science, Oxide Heterostructures +14

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

Brian Romanczyk, Xun Zheng, Matthew Guidry et al. · IEEE Electron Device Letters · 2020 · 112 citations

Wide-bandgap Semiconductor, Electrical Engineering, Additional Passivation +9

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

Steven Wienecke, Brian Romanczyk, Matthew Guidry et al. · IEEE Electron Device Letters · 2017 · 109 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage

Xun Zheng, Matthew Guidry, Haoran Li et al. · IEEE Electron Device Letters · 2015 · 54 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11