Matthew Guidry

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Brian Romanczyk, Steven Wienecke, Matthew Guidry et al. · IEEE Transactions on Electron Devices · 2017 · 220 citations

Wide-bandgap Semiconductor, Electrical Engineering, Constant 8 +14

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

Brian Romanczyk, Xun Zheng, Matthew Guidry et al. · IEEE Electron Device Letters · 2020 · 112 citations

Wide-bandgap Semiconductor, Electrical Engineering, Additional Passivation +9

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

Steven Wienecke, Brian Romanczyk, Matthew Guidry et al. · IEEE Electron Device Letters · 2017 · 109 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

Onur S. Koksaldi, J. Robert Haller, Haoran Li et al. · IEEE Electron Device Letters · 2018 · 96 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Pawana Shrestha, Matthew Guidry, Brian Romanczyk et al. · IEEE Electron Device Letters · 2020 · 88 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +11