Pawana Shrestha

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Pawana Shrestha, Matthew Guidry, Brian Romanczyk et al. · IEEE Electron Device Letters · 2020 · 88 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +11

6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates

Wenjian Liu, Brian Romanczyk, Matthew Guidry et al. · IEEE Microwave and Wireless Components Letters · 2021 · 50 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

Weiyi Li, Brian Romanczyk, Matthew Guidry et al. · IEEE Transactions on Electron Devices · 2023 · 46 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Brian Romanczyk, Matthew Guidry, Xun Zheng et al. · Applied Physics Letters · 2021 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Millimeter Wave Technology +11

First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

Emre Akso, Henry Collins, Christopher Clymore et al. · IEEE Microwave and Wireless Technology Letters · 2023 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11