Henry Collins

Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

Weiyi Li, Brian Romanczyk, Matthew Guidry et al. · IEEE Transactions on Electron Devices · 2023 · 46 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

Emre Akso, Henry Collins, Christopher Clymore et al. · IEEE Microwave and Wireless Technology Letters · 2023 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE

Weiyi Li, Brian Romanczyk, Emre Akso et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 16 citations

Wide-bandgap Semiconductor, Ghz Performance, Electrical Engineering +13

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

Emre Akso, Henry Collins, Kamruzzaman Khan et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 16 citations

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz

Henry Collins, Emre Akso, Christopher J. Clymore et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 14 citations