Weiyi Li

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Ronghui Hao, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2017 · 124 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Zhili Zhang, Guohao Yu, Xiaodong Zhang et al. · IEEE Transactions on Electron Devices · 2016 · 123 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Normally-off <i>p</i>-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Ronghui Hao, Kai Fu, Guohao Yu et al. · Applied Physics Letters · 2016 · 88 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Typical solar radiation year construction using k-means clustering and discrete-time Markov chain

Shuai Li, Hongjie Ma, Weiyi Li · Applied Energy · 2017 · 68 citations · Full text

Solar Variability, Engineering, Data Science +9

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhili Zhang, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2016 · 54 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14