Weiyi Li - Concepedia

Author

Weiyi Li

University of California, Santa Barbara ORCID

Also Known As

Li Wei-Yi, W. Li, Wei-Yi Li, Weiyi Li

Publications

891

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Suzhou Institute of Nano-tech and Nano-bionics Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology University of Chinese Academy of Sciences

About

Weiyi Li is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	706
2	Applied Physics	12	12	620
3	Electrical Engineering	12	12	620
4	Chemistry	1	1	18
5	Data Science	1	1	68

Weiyi Li

Publications

816

Citations

H-Index

Page 1

	Year	Citations
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs Ronghui Hao, Weiyi Li, Kai Fu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2017	124
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si<sub>3</sub>N<sub>4</sub>as Gate Dielectric and Passivation Layer Zhili Zhang, Guohao Yu, Xiaodong Zhang, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2016	123
Normally-off <i>p</i>-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment Ronghui Hao, Kai Fu, Guohao Yu, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHydrogen PlasmaHydrogen Plasma Treatment	2016	88
Typical solar radiation year construction using k-means clustering and discrete-time Markov chain Shuai Li, Hongjie Ma, Weiyi Li Applied Energy Solar VariabilityEngineeringData ScienceSolar PowerEnergy Management	2017	68
AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Zhili Zhang, Weiyi Li, Kai Fu, IEEE Electron Device Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2016	54
6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates Wenjian Liu, Brian Romanczyk, Matthew Guidry, IEEE Microwave and Wireless Components Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringRecord 33.8Engineering	2021	50
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs Weiyi Li, Brian Romanczyk, Matthew Guidry, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied Physics	2023	46
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density Brian Romanczyk, Weiyi Li, Matthew Guidry, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesPhysics	2020	44
Bandgap engineering of monolayer MoS2 under strain: A DFT study Can Li, Bowen Fan, Weiyi Li, Journal of the Korean Physical Society	2015	29
Leydig cell transplantation restores androgen production in surgically castrated prepubertal rats Jie Sun, Yebin Xi, Zhongde Zhang, Asian Journal of Andrology	2009	24

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