Guohao Yu - Concepedia

Author

Guohao Yu

Suzhou Institute of Nano-tech and Nano-bionics ORCID

Also Known As

G. H. Yu, G. Yu, G.H. Yu, Gaon Yu, Guo-Hao Yu, Guo-hao Yu, GuoHao Yu, Guohao Yu, Xiaoyu Ding, Yu Guo-Hao

149

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences University of Science and Technology of China Nanjing University of Science and Technology University of Chinese Academy of Sciences

About

Guohao Yu is an author at Suzhou Institute of Nano-tech and Nano-bionics specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	30	1.3K
2	Applied Physics	20	29	1.2K
3	Chemical Engineering	2	2	86
4	Chemistry	2	2	120
5	Natural Sciences	1	1	11

Guohao Yu

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Oligothiophene‐Functionalized Truxene: Star‐Shaped Compounds for Organic Field‐Effect Transistors Yuhan Sun, Kai Xiao, Y.Q. Liu, Advanced Functional Materials	2005	139
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs Ronghui Hao, Weiyi Li, Kai Fu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2017	124
Broadband Ultraviolet Photodetector Based on Vertical Ga<sub>2</sub>O<sub>3</sub>/GaN Nanowire Array with High Responsivity Tao He, Xiaodong Zhang, Xiaoyu Ding, Advanced Optical Materials Wide-bandgap SemiconductorOptical MaterialsEngineering/Gan NanowiresOptoelectronic Devices	2019	124
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si<sub>3</sub>N<sub>4</sub>as Gate Dielectric and Passivation Layer Zhili Zhang, Guohao Yu, Xiaodong Zhang, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2016	123
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors Ning Xu, Ronghui Hao, Fu Chen, Applied Physics Letters SemiconductorsGate Leakage MechanismsElectrical EngineeringElectronic DevicesEngineering	2018	110
Gallium Nitride Schottky betavoltaic nuclear batteries Min Lü, Guoguang Zhang, Kai Fu, Energy Conversion and Management Electric BatteryElectrical EngineeringEngineeringApplied PhysicsEnergy Storage	2011	88
Normally-off <i>p</i>-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment Ronghui Hao, Kai Fu, Guohao Yu, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHydrogen PlasmaHydrogen Plasma Treatment	2016	88
High‐Efficiency Blue Light‐Emitting Diodes Based on a Polyphenylphenyl Compound with Strong Electron‐Accepting Groups Xi Xu, Shiyou Chen, Guohao Yu, Advanced Materials Optical MaterialsEngineeringOrganic ElectronicsOrganic ChemistryOptoelectronic Devices	2007	76
AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Zhili Zhang, Weiyi Li, Kai Fu, IEEE Electron Device Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2016	54
Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation Zhili Zhang, Kai Fu, Xuguang Deng, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2015	45

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