Near-Infrared Photodetectors Based on MoTe₂/Graphene Heterostructure with High Responsivity and Flexibility

Wenzhi Yu, Shaojuan Li, Yupeng Zhang, +5

Small

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Ronghui Hao, Weiyi Li, Kai Fu, +12

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride +8

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Zhili Zhang, Guohao Yu, Xiaodong Zhang, +13

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +11

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Mengyuan Hua, Cheng Liu, Shu Yang, +6

IEEE Transactions on Electron Devices

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +12

Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Mengyuan Hua, Zhaofu Zhang, Jin Wei, +6

Wide-bandgap SemiconductorInterface Protection TechniqueElectrical EngineeringEngineeringApplied Physics +8

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN<sub><italic>x</italic></sub> as Gate Dielectric

Mengyuan Hua, Cheng Liu, Shu Yang, +6

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +8

Gallium Nitride Schottky betavoltaic nuclear batteries

Min Lü, Guoguang Zhang, Kai Fu, +3

Energy Conversion and Management

Electric BatteryElectrical EngineeringEngineeringApplied PhysicsEnergy Storage +5

Normally-off <i>p</i>-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Ronghui Hao, Kai Fu, Guohao Yu, +9

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringHydrogen PlasmaHydrogen Plasma Treatment +6

Demonstration of mechanically exfoliated <i>β</i>-Ga2O3/GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu, +6

Applied Physics Letters

Materials ScienceSemiconductorsMaterials EngineeringElectronic DevicesEngineering +11

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I

Houqiang Fu, Kai Fu, Srabanti Chowdhury, +2

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DevicesNanoelectronics +13