Kai Fu

Near-Infrared Photodetectors Based on MoTe₂/Graphene Heterostructure with High Responsivity and Flexibility

Wenzhi Yu, Shaojuan Li, Yupeng Zhang et al. · Small · 2017 · 264 citations

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Ronghui Hao, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2017 · 124 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer

Zhili Zhang, Guohao Yu, Xiaodong Zhang et al. · IEEE Transactions on Electron Devices · 2016 · 123 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Mengyuan Hua, Cheng Liu, Shu Yang et al. · IEEE Transactions on Electron Devices · 2015 · 110 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Mengyuan Hua, Zhaofu Zhang, Jin Wei et al. · 2016 · 109 citations

Wide-bandgap Semiconductor, Interface Protection Technique, Electrical Engineering +10