Cheng Liu

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Hanxing Wang, Jin Wei, Ruiliang Xie et al. · IEEE Transactions on Power Electronics · 2016 · 268 citations

Engineering, Electrical Engineering, Electronic Materials +11

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Shu Yang, Zhikai Tang, King‐Yuen Wong et al. · IEEE Electron Device Letters · 2013 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · IEEE Electron Device Letters · 2014 · 116 citations

Engineering, Electrical Engineering, Materials Science +15

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Jin Wei, Shenghou Liu, Baikui Li et al. · IEEE Electron Device Letters · 2015 · 115 citations

Engineering, Electrical Engineering, Materials Science +13

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Mengyuan Hua, Cheng Liu, Shu Yang et al. · IEEE Transactions on Electron Devices · 2015 · 114 citations

Engineering, Electrical Engineering, Materials Science +17