Cheng Liu - Concepedia

Author

Cheng Liu

Hong Kong University of Science and Technology ORCID

Also Known As

CHENG- RUI LIU, Cheng Liu, Liu, Cheng

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Hong Kong University of Science and Technology Chinese Academy of Sciences Institute of Microelectronics University of Hong Kong Suzhou Institute of Nano-tech and Nano-bionics

About

Cheng Liu is an author at Hong Kong University of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	33	1.9K
2	Applied Physics	20	28	1.6K
3	Electrical Engineering	20	28	1.8K
4	Chemical Engineering	1	1	21
5	Chemistry	1	1	16

Cheng Liu

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations Hanxing Wang, Jin Wei, Ruiliang Xie, IEEE Transactions on Power Electronics Dynamic Ron CharacterizationSystematic CharacterizationElectrical EngineeringEngineeringCircuit Design Considerations	2016	261
High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation Shu Yang, Zhikai Tang, King‐Yuen Wong, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineering\Rm GanChemical Deposition\Rm Nitride	2013	177
Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer Shenghou Liu, Shu Yang, Zhikai Tang, IEEE Electron Device Letters SemiconductorsAluminium NitrideElectrical EngineeringAln Interfacial LayerEngineering	2014	113
Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor Jin Wei, Shenghou Liu, Baikui Li, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringApplied Physics	2015	113
Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs Mengyuan Hua, Cheng Liu, Shu Yang, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2015	110
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN<sub>x</sub> Passivation Zhikai Tang, Sen Huang, Qimeng Jiang, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2013	105
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer Shenghou Liu, Shu Yang, Zhikai Tang, Applied Physics Letters Materials ScienceOxide HeterostructuresSemiconductorsAln Interfacial LayerInterface/border Trap Characterization	2015	102
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs Shu Yang, Shenghou Liu, Yunyou Lu, IEEE Transactions on Electron Devices Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2015	102
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN<sub><italic>x</italic></sub> as Gate Dielectric Mengyuan Hua, Cheng Liu, Shu Yang, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2015	93
Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier Cheng Liu, Shu Yang, Shenghou Liu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2015	69

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