Zhikai Tang

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Zhikai Tang, Qimeng Jiang, Yunyou Lu et al. · IEEE Electron Device Letters · 2013 · 266 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Shu Yang, Zhikai Tang, King‐Yuen Wong et al. · IEEE Electron Device Letters · 2013 · 177 citations

Wide-bandgap Semiconductor, Engineering, \Rm Gan +16

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Sen Huang, Qimeng Jiang, Shu Yang et al. · IEEE Electron Device Letters · 2013 · 128 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +16

Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · IEEE Electron Device Letters · 2014 · 113 citations

Semiconductors, Aluminium Nitride, Electrical Engineering +11

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN_x Passivation

Zhikai Tang, Sen Huang, Qimeng Jiang et al. · IEEE Electron Device Letters · 2013 · 105 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10