Zhikai Tang

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Zhikai Tang, Qimeng Jiang, Yunyou Lu et al. · IEEE Electron Device Letters · 2013 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Shu Yang, Zhikai Tang, King‐Yuen Wong et al. · IEEE Electron Device Letters · 2013 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Sen Huang, Qimeng Jiang, Shu Yang et al. · IEEE Electron Device Letters · 2013 · 131 citations

Engineering, Materials Engineering, Materials Science +17

Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · IEEE Electron Device Letters · 2014 · 116 citations

Engineering, Electrical Engineering, Materials Science +15

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · Applied Physics Letters · 2015 · 105 citations

Engineering, Materials Engineering, Materials Science +17