Zhikai Tang - Concepedia

Concepedia

Author

Zhikai Tang

Hong Kong University of Science and Technology ORCID

Also Known As

Z. Tang, Z. Y. Tang, ZhiKai TANG, Zhihao Tang, Zhikai Tang

51

Publications

1.7K

Citations

20

H-Index

26

Concepts

All Affiliations

Hong Kong University of Science and Technology Institute of Microelectronics Chinese Academy of Sciences Peking University University of Hong Kong

ZT

About

Zhikai Tang is an author at Hong Kong University of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	22	1.6K
2	Applied Physics	19	21	1.5K
3	Electrical Engineering	19	21	1.4K
4	Materials Science	6	6	498
5	Materials Engineering	1	1	58

Zhikai Tang

×

26

Publications

1.7K

Citations

20

H-Index

	Year	Citations
600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Zhikai Tang, Qimeng Jiang, Yunyou Lu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical Engineering\Rm SinEngineering	2013	266
High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation Shu Yang, Zhikai Tang, King‐Yuen Wong, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineering\Rm GanChemical Deposition\Rm Nitride	2013	177
Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges Sen Huang, Qimeng Jiang, Shu Yang, IEEE Electron Device Letters Wide-bandgap SemiconductorAluminium NitrideEngineeringSemiconductorsPolarization Charges	2013	128
Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer Shenghou Liu, Shu Yang, Zhikai Tang, IEEE Electron Device Letters SemiconductorsAluminium NitrideElectrical EngineeringAln Interfacial LayerEngineering	2014	113
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN<sub>x</sub> Passivation Zhikai Tang, Sen Huang, Qimeng Jiang, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2013	105
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer Shenghou Liu, Shu Yang, Zhikai Tang, Applied Physics Letters Materials ScienceOxide HeterostructuresSemiconductorsAln Interfacial LayerInterface/border Trap Characterization	2015	102
Characterization of <i>V</i><sub>T</sub>‐instability in enhancement‐mode Al<sub>2</sub>O<sub>3</sub>‐AlGaN/GaN MIS‐HEMTs Yunyou Lu, Shu Yang, Qimeng Jiang, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2013	72
Mapping of interface traps in high-performance Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques Shu Yang, Zhikai Tang, King‐Yuen Wong,	2013	71
Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components Aixi Zhang, Lining Zhang, Zhikai Tang, IEEE Transactions on Electron Devices Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringGan Hemts	2014	70
Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier Cheng Liu, Shu Yang, Shenghou Liu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2015	69

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