600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Abstract

In this letter, 600-V normally-OFF <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm SiN}_{x}$</tex></formula> /AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is reported. Normally-OFF operation and low OFF-state gate leakage are obtained by using fluorine plasma ion implantation in conjunction with the adoption of a 17-nm <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm SiN}_{x}$</tex></formula> thin film grown by plasma-enhanced chemical vapor deposition as the gate insulator. The normally-OFF MIS-HEMT exhibits a threshold voltage of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${+}{\rm 3.6}~{\rm V}$</tex></formula> , a drive current of 430 mA/mm at a gate bias of 14 V, a specific ON-resistance of 2.1 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm m}\Omega\cdot{\rm cm}^{2}$</tex> </formula> and an OFF-state breakdown voltage of 604 V at a drain leakage current of 1 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$\mu{\rm A}/{\rm mm}$</tex></formula> with <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$V_{\rm GS}=0~{\rm V}$</tex> </formula> , and the substrate grounded. Effective current collapse suppression is obtained by AlN/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm SiN}_{x}$</tex></formula> passivation as proved by high-speed pulsed <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> and low-speed high-voltage switching measurement results.