Qimeng Jiang

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Zhikai Tang, Qimeng Jiang, Yunyou Lu et al. · IEEE Electron Device Letters · 2013 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Sen Huang, Qimeng Jiang, Shu Yang et al. · IEEE Electron Device Letters · 2012 · 246 citations

Engineering, Materials Engineering, Materials Science +17

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Chunhua Zhou, Qimeng Jiang, Sen Huang et al. · IEEE Electron Device Letters · 2012 · 189 citations

Engineering, Electrical Engineering, Materials Science +17

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Sen Huang, Qimeng Jiang, Shu Yang et al. · IEEE Electron Device Letters · 2013 · 131 citations

Engineering, Materials Engineering, Materials Science +17

Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · IEEE Electron Device Letters · 2014 · 116 citations

Engineering, Electrical Engineering, Materials Science +15