Yunyou Lu

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Zhikai Tang, Qimeng Jiang, Yunyou Lu et al. · IEEE Electron Device Letters · 2013 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Shu Yang, Zhikai Tang, King‐Yuen Wong et al. · IEEE Electron Device Letters · 2013 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Jin Wei, Shenghou Liu, Baikui Li et al. · IEEE Electron Device Letters · 2015 · 115 citations

Engineering, Electrical Engineering, Materials Science +13

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Shu Yang, Shenghou Liu, Yunyou Lu et al. · IEEE Transactions on Electron Devices · 2015 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of <i>V</i>_T‐instability in enhancement‐mode Al₂O₃‐AlGaN/GaN MIS‐HEMTs

Yunyou Lu, Shu Yang, Qimeng Jiang et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 73 citations

Engineering, Electrical Engineering, Materials Science +17