Yunyou Lu - Concepedia

Concepedia

Author

Yunyou Lu

Hong Kong University of Science and Technology ORCID

Also Known As

Y. Lu, Yongzheng Lu, Yuchuan Lu, Yunyou Lu

43

Publications

1.4K

Citations

19

H-Index

27

Concepts

All Affiliations

Hong Kong University of Science and Technology Chinese Academy of Sciences University of Hong Kong Suzhou Institute of Nano-tech and Nano-bionics Taiwan Semiconductor Manufacturing Company (Taiwan)

YL

About

Yunyou Lu is an author at Hong Kong University of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	20	1.2K
2	Electrical Engineering	16	20	1.2K
3	Applied Physics	15	19	1.2K
4	Physics	6	6	567
5	Materials Science	2	2	218

Yunyou Lu

×

24

Publications

1.4K

Citations

19

H-Index

	Year	Citations
600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Zhikai Tang, Qimeng Jiang, Yunyou Lu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical Engineering\Rm SinEngineering	2013	266
High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation Shu Yang, Zhikai Tang, King‐Yuen Wong, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineering\Rm GanChemical Deposition\Rm Nitride	2013	177
Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor Jin Wei, Shenghou Liu, Baikui Li, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringApplied Physics	2015	113
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs Shu Yang, Shenghou Liu, Yunyou Lu, IEEE Transactions on Electron Devices Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2015	102
Characterization of <i>V</i><sub>T</sub>‐instability in enhancement‐mode Al<sub>2</sub>O<sub>3</sub>‐AlGaN/GaN MIS‐HEMTs Yunyou Lu, Shu Yang, Qimeng Jiang, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2013	72
Mapping of interface traps in high-performance Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques Shu Yang, Zhikai Tang, King‐Yuen Wong,	2013	71
1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform Qimeng Jiang, Cheng Liu, Yunyou Lu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2013	64
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess Jin Wei, Shenghou Liu, Baikui Li, Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsRobust Gate Recess	2015	61
Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs Kevin J. Chen, Shu Yang, Zhikai Tang, physica status solidi (a) Oxide HeterostructuresWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2014	49
Dynamic Gate Stress-Induced $V_{\text {TH}}$ Shift and Its Impact on Dynamic $R_{\mathrm {ON}}$ in GaN MIS-HEMTs Shu Yang, Yunyou Lu, Hanxing Wang, IEEE Electron Device Letters SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesEngineering	2015	47

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