Shu Yang

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.3K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Zhikai Tang, Qimeng Jiang, Yunyou Lu et al. · IEEE Electron Device Letters · 2013 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Sen Huang, Qimeng Jiang, Shu Yang et al. · IEEE Electron Device Letters · 2012 · 246 citations

Engineering, Materials Engineering, Materials Science +17

Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

Rui Li, Xinke Wu, Shu Yang et al. · IEEE Transactions on Power Electronics · 2018 · 182 citations

Engineering, Electrical Engineering, Microelectronics +15

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Shu Yang, Zhikai Tang, King‐Yuen Wong et al. · IEEE Electron Device Letters · 2013 · 179 citations

Engineering, Materials Engineering, Materials Science +17