Kamruzzaman Khan

N-polar GaN: Epitaxy, properties, and device applications

Subhajit Mohanty, Kamruzzaman Khan, Elaheh Ahmadi · Progress in Quantum Electronics · 2022 · 39 citations

Semiconductors, Electrical Engineering, Engineering +3

Si doping of <b> <i>β</i> </b>-Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy

Zhuoqun Wen, Kamruzzaman Khan, Xin Zhai et al. · Applied Physics Letters · 2023 · 24 citations

Materials Science, Semiconductors, Materials Engineering +12

Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy

Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen et al. · Materials Research Letters · 2023 · 16 citations · Full text

Aluminium Nitride, Aluminum Scandium Nitride, Engineering +19

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

Emre Akso, Henry Collins, Kamruzzaman Khan et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 16 citations

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz

Henry Collins, Emre Akso, Christopher J. Clymore et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 14 citations