Kamruzzaman Khan - Concepedia

Author

Kamruzzaman Khan

University of Michigan ORCID

Also Known As

K. Khan, K.H. Khan, Kamruzzaman Khan, Khan, Kamruzzaman

Publications

253

Citations

H-Index

Concepts

All Affiliations

University of Michigan University of California, Santa Barbara

About

Kamruzzaman Khan is an author at University of Michigan specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	92
2	Applied Physics	4	4	92
3	Electrical Engineering	3	3	68
4	Materials Engineering	3	3	53
5	Materials Science	3	3	53

Kamruzzaman Khan

Publications

132

Citations

H-Index

Page 1

	Year	Citations
N-polar GaN: Epitaxy, properties, and device applications Subhajit Mohanty, Kamruzzaman Khan, Elaheh Ahmadi Progress in Quantum Electronics SemiconductorsElectrical EngineeringEngineeringApplied PhysicsN-polar Gan	2022	39
Si doping of <b> <i>β</i> </b>-Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy Zhuoqun Wen, Kamruzzaman Khan, Xin Zhai, Applied Physics Letters Materials ScienceSemiconductorsMaterials EngineeringEpitaxial GrowthEngineering	2023	24
Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, Materials Research Letters Aluminium NitrideAluminum Scandium NitrideEngineeringAlscn DevicesThermal Conductivity	2023	16
Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz Emre Akso, Henry Collins, Kamruzzaman Khan, IEEE Microwave and Wireless Technology Letters	2024	16
N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P<sub>out</sub> at 94 GHz Henry Collins, Emre Akso, Christopher J. Clymore, IEEE Microwave and Wireless Technology Letters	2024	14
Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE Christian Wurm, Henry Collins, Nirupam Hatui, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringDevice-quality 60NanoelectronicsCompound Semiconductor	2022	13
Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric Subhajit Mohanty, Zhe Jian, Kamruzzaman Khan, Journal of Electronic Materials	2023	10

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