Subhajit Mohanty

An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory

Ding Wang, Ping Wang, Shubham Mondal et al. · Advanced Electronic Materials · 2022 · 128 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Temperature-dependent current-voltage characteristics of <b> <i>β</i> </b>-Ga2O3 trench Schottky barrier diodes

Zhe Jian, Subhajit Mohanty, Elaheh Ahmadi · Applied Physics Letters · 2020 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Ping Wang, Ding Wang, Boyu Wang et al. · Applied Physics Letters · 2021 · 67 citations

Engineering, Materials Science, Physics +17

N-polar GaN: Epitaxy, properties, and device applications

Subhajit Mohanty, Kamruzzaman Khan, Elaheh Ahmadi · Progress in Quantum Electronics · 2022 · 43 citations

Engineering, Materials Engineering, Materials Science +13

Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy

Sandra Díez, Subhajit Mohanty, Çağlıyan Kurdak et al. · Applied Physics Letters · 2020 · 39 citations

Engineering, Electrical Engineering, Materials Science +17