Boyu Wang

Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy

Ding Wang, Ping Wang, Boyu Wang et al. · Applied Physics Letters · 2021 · 96 citations

Materials Science, Semiconductors, Electrical Engineering +13

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Ping Wang, Ding Wang, Boyu Wang et al. · Applied Physics Letters · 2021 · 64 citations

Semiconductors, Materials Science, Wide-bandgap Semiconductor +13

Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN

Ping Wang, Ding Wang, Yutong Bi et al. · Applied Physics Letters · 2022 · 44 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Oxygen defect dominated photoluminescence emission of Sc<i>x</i>Al1−<i>x</i>N grown by molecular beam epitaxy

Ping Wang, Boyu Wang, David Laleyan et al. · Applied Physics Letters · 2021 · 36 citations

Aluminium Nitride, Optical Materials, Engineering +17

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

Emre Akso, Henry Collins, Kamruzzaman Khan et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 16 citations