Zhe Jian - Concepedia

Author

Zhe Jian

University of Michigan ORCID

Also Known As

Ashley (Zhe) Jian, Ashley Jian, Jian, Ashley, Zhe (A.) Jian, Zhe (Ashley) Jian, Zhe Ashley Jian, Zhe Jian

Publications

256

Citations

H-Index

Concepts

All Affiliations

University of Michigan University of California, Santa Barbara

About

Zhe Jian is an author at University of Michigan specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	178
2	Electrical Engineering	6	6	178
3	Applied Physics	5	5	158
4	Materials Science	2	2	48
5	Physics	1	1	15

Zhe Jian

Publications

205

Citations

H-Index

Page 1

	Year	Citations
Temperature-dependent current-voltage characteristics of <b> <i>β</i> </b>-Ga2O3 trench Schottky barrier diodes Zhe Jian, Subhajit Mohanty, Elaheh Ahmadi Applied Physics Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2020	72
Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/<b> <i>β</i> </b>-Ga2O3 (001) MOSCAPs Zhe Jian, Subhajit Mohanty, Elaheh Ahmadi Applied Physics Letters Materials ScienceAluminium NitrideElectrical EngineeringEngineeringOxide Electronics	2020	31
Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions Subhajit Mohanty, Islam Sayed, Zhe Jian, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSurface TreatmentsChemical DepositionSurface Technology	2021	23
Switching Performance Analysis of 3.5 kV Ga<sub>2</sub>O<sub>3</sub> Power FinFETs Zhe Jian, Subhajit Mohanty, Elaheh Ahmadi IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSimulated Electric FieldEngineeringPerformance Analysis	2020	20
Chlorine-based inductive coupled plasma etching of <i>α</i> -Ga <sub>2</sub> O <sub>3</sub> Zhe Jian, Yuichi Oshima, S. P. Wright, Semiconductor Science and Technology	2019	17
Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) Zhe Jian, Islam Sayed, Wenjian Liu, Applied Physics Letters Materials ScienceNet Positive InterfaceElectrical EngineeringNear-interface TrapsEngineering	2021	17
Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel Subhajit Mohanty, Sandra Díez, Zhe Jian, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringHole TrapEngineering	2020	15
Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric Subhajit Mohanty, Zhe Jian, Kamruzzaman Khan, Journal of Electronic Materials	2023	10

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