Applied Physics Letters · 2014 · 36 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBarrier DesignCharge Carrier DensityConductivityElectron MobilityGallium NitrideGallium Nitride (Gan) MaterialsHigh-electron-mobility TransistorsMetal-organic Chemical Vapor Deposition
Scaling down the channel-thickness (tch) in GaN/(In, Al, Ga)N high-electron-mobility-transistors (HEMTs) is essential to eliminating short-channel effects in sub 100 nm gate length HEMTs. However, this scaling can degrade both charge density (ns) and mobility (μ), thereby reducing channel-conductivity. In this study, the back-barrier design in N-polar GaN/(In, Al, Ga)N was engineered to achieve highly conductive-channels with tch < 5-nm using metal organic chemical vapor deposition. Compositional-grading was found to be the most effective approach in reducing channel-conductivity for structures with tch ∼ 3-nm. For a HEMT with 3-nm-thick-channel, a sheet-resistance of 329 Ω/◻ and a peak-transconductance of 718 mS/mm were demonstrated.
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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 336 citations
300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 257 citations
N-polar GaN∕AlGaN∕GaN high electron mobility transistors
Siddharth Rajan, Alessandro Chini, Man Hoi Wong et al. · Journal of Applied Physics · 2007 · 246 citations · Full text