N. Fichtenbaum - Concepedia

Concepedia

Author

N. Fichtenbaum

University of California, Santa Barbara

Also Known As

N. A. Fichtenbaum, N. Fichtenbaum, N.A. Fichtenbaum, Nicholas A Fichtenbaum, Nicholas A. Fichtenbaum, Nicholas Fichtenbaum

37

Publications

1.9K

Citations

20

H-Index

31

Concepts

All Affiliations

University of California, Santa Barbara

NF

About

N. Fichtenbaum is an author at University of California, Santa Barbara specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	24	1.6K
2	Applied Physics	19	24	1.6K
3	Electrical Engineering	17	21	1.1K
4	Chemical Engineering	2	2	312
5	Chemistry	1	1	215

N. Fichtenbaum

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26

Publications

1.9K

Citations

20

H-Index

	Year	Citations
N-polar GaN epitaxy and high electron mobility transistors Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi, Semiconductor Science and Technology	2013	222
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides S. Keller, Haoran Li, Matthew A. Laurent, Semiconductor Science and Technology Materials ScienceMaterials EngineeringElectrical EngineeringAluminium NitrideLow Impurity Incorporation	2014	215
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition S. Keller, N. Fichtenbaum, Feng Wu, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorChemical EngineeringEngineeringSurface Science	2007	183
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition N. Fichtenbaum, Tom Mates, S. Keller, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorHeteroepitaxial N-faceEngineeringImpurity Incorporation	2008	176
Growth and characterization of N-polar InGaN∕GaN multiquantum wells S. Keller, N. Fichtenbaum, M. Furukawa, Applied Physics Letters Materials ScienceChemical EngineeringEngineeringCrystal Growth TechnologyExperimental Analysis	2007	129
Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells S. Keller, C. Schaake, N. Fichtenbaum, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2006	102
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition S. Keller, Chang Soo Suh, Z. Chen, Journal of Applied Physics Oxide HeterostructuresMaterials ScienceElectrical EngineeringSemiconductorsEngineering	2008	92
Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment L. Shen, Tomás Palacios, C. Poblenz, IEEE Electron Device Letters Dispersion SuppressionPassivation-free Gan-based HemtsElectrical EngineeringWide-bandgap SemiconductorGan Hemts	2006	66
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures S. Keller, Chang Soo Suh, N. Fichtenbaum, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringCrystal MisorientationSemiconductorsN-polar Ingan/gan	2008	65
V-Gate GaN HEMTs for X-Band Power Applications Rongming Chu, Likun Shen, N. Fichtenbaum, IEEE Electron Device Letters Electrical EngineeringEngineeringV-gate Gan Hemts48-V Drain BiasApplied Physics	2008	65

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