N. Fichtenbaum

N-polar GaN epitaxy and high electron mobility transistors

Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi et al. · Semiconductor Science and Technology · 2013 · 222 citations

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

S. Keller, Haoran Li, Matthew A. Laurent et al. · Semiconductor Science and Technology · 2014 · 215 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

S. Keller, N. Fichtenbaum, Feng Wu et al. · Journal of Applied Physics · 2007 · 183 citations

Materials Science, Wide-bandgap Semiconductor, Chemical Engineering +14

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

N. Fichtenbaum, Tom Mates, S. Keller et al. · Journal of Crystal Growth · 2008 · 176 citations

Materials Science, Wide-bandgap Semiconductor, Heteroepitaxial N-face +7

Growth and characterization of N-polar InGaN∕GaN multiquantum wells

S. Keller, N. Fichtenbaum, M. Furukawa et al. · Applied Physics Letters · 2007 · 129 citations

Materials Science, Chemical Engineering, Engineering +12