Journal of Crystal Growth · 2008 · 180 citations · 27 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionDopingIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsControlled Impurity IncorporationGallium NitrideGallium Nitride (Gan) MaterialsHeterostructure MaterialsImpurity IncorporationImpurity ReactivityImpurity RemovalMetalorganic Chemical Vapor Deposition
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30-W/mm GaN HEMTs by Field Plate Optimization
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Hole Compensation Mechanism of P-Type GaN Films
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