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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Materials ScienceWide-bandgap SemiconductorHeteroepitaxial N-faceEngineeringImpurity IncorporationSurface ScienceApplied PhysicsGan Power DeviceGallium OxideGa-face Gan Films