J. Kuzmı́k

Power electronics on InAlN/(In)GaN: Prospect for a record performance

J. Kuzmı́k · IEEE Electron Device Letters · 2001 · 559 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

J. Kuzmı́k, R. Javorka, A. Alam et al. · IEEE Transactions on Electron Devices · 2002 · 213 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel et al. · IEEE Electron Device Letters · 2016 · 168 citations

Wide-bandgap Semiconductor, Electrical Engineering, Bias Stress +12

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna, J. Kuzmı́k · Applied Physics Letters · 2012 · 144 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Threshold Voltage Calculation +14

InAlN/GaN HEMTs: a first insight into technological optimization

J. Kuzmı́k, A. Kostopoulos, J.‐F. Carlin et al. · IEEE Transactions on Electron Devices · 2006 · 136 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +13