A. Alam

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 328 citations

Materials Science, Crack-free Gan, Wide-bandgap Semiconductor +11

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

J. Kuzmı́k, R. Javorka, A. Alam et al. · IEEE Transactions on Electron Devices · 2002 · 213 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

A. Dadgar, J. Christen, T. Riemann et al. · Applied Physics Letters · 2001 · 106 citations

Engineering, Optoelectronic Devices, Ingan/gan Multiquantum-well Diode +17

Polydiacetylene Nanofiber Composites as a Colorimetric Sensor Responding To <i>Escherichia coli</i> and pH

Janet P. Yapor, Abeer Alharby, Claudia Gentry‐Weeks et al. · ACS Omega · 2017 · 91 citations · Full text

AlGaN/GaN HEMTs on (111) silicon substrates

P. Javorka, A. Alam, M. Wolter et al. · IEEE Electron Device Letters · 2002 · 83 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12