A. Dadgar

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 328 citations

Materials Science, Crack-free Gan, Wide-bandgap Semiconductor +11

GaN-based optoelectronics on silicon substrates

A. Krost, A. Dadgar · Materials Science and Engineering B · 2002 · 294 citations

Electrical Engineering, Engineering, Applied Physics +4

Template‐Assisted Large‐Scale Ordered Arrays of ZnO Pillars for Optical and Piezoelectric Applications

Hong Jin Fan, Woo Lee, Robert Hauschild et al. · Small · 2006 · 221 citations

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

S. Fritze, A. Dadgar, H. De Witte et al. · Applied Physics Letters · 2012 · 194 citations

Materials Science, Semiconductors, Electrical Engineering +11

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and <i>in situ</i> SixNy masking

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Applied Physics Letters · 2002 · 183 citations

Engineering, Optoelectronic Devices, Semiconductors +16