GaN-based optoelectronics on silicon substrates

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THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

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Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K

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Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 330 citations

Engineering, Materials Engineering, Materials Science +17

Thermal stress in GaN epitaxial layers grown on sapphire substrates

Takahiro Kozawa, Tetsu Kachi, H. Kano et al. · Journal of Applied Physics · 1995 · 298 citations

Natural Sciences, Materials Engineering, Materials Science +17