S. Fritze

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

S. Fritze, A. Dadgar, H. De Witte et al. · Applied Physics Letters · 2012 · 194 citations

Materials Science, Semiconductors, Electrical Engineering +11

Improving GaN‐on‐silicon properties for GaN device epitaxy

A. Dadgar, Thomas Hempel, J. Bläsing et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 68 citations

Semiconductors, Gan Device Epitaxy, Electrical Engineering +8

Germanium - the superior dopant in n-type GaN

Christian Nenstiel, M. Bügler, Gordon Callsen et al. · physica status solidi (RRL) - Rapid Research Letters · 2015 · 50 citations

Materials Science, Semiconductors, Semiconductor Technology +13

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

S. Fritze, P. Drechsel, P. Rode et al. · Journal of Applied Physics · 2012 · 37 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

P. Drechsel, Werner Bergbauer, Patrick Rode et al. · physica status solidi (a) · 2012 · 36 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17