M. Bügler

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

S. Fritze, A. Dadgar, H. De Witte et al. · Applied Physics Letters · 2012 · 194 citations

Materials Science, Semiconductors, Electrical Engineering +11

Optical signature of Mg-doped GaN: Transfer processes

Gordon Callsen, Markus R. Wagner, Thomas Kure et al. · Physical Review B · 2012 · 57 citations

Optical Materials, Engineering, Chemistry +16

Germanium - the superior dopant in n-type GaN

Christian Nenstiel, M. Bügler, Gordon Callsen et al. · physica status solidi (RRL) - Rapid Research Letters · 2015 · 50 citations

Materials Science, Semiconductors, Semiconductor Technology +13

Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution with Sulfur Leading to Materials with Advanced Properties for Optical Applications Like Full Inorganic UV Protection

Daniela Lehr, Martin Luka, Markus R. Wagner et al. · Chemistry of Materials · 2012 · 46 citations

Optical Materials, Engineering, Inorganic Photochemistry +21

Intrinsic electronic properties of high-quality wurtzite InN

H. Eisele, Josephine Schuppang, M. Schnedler et al. · Physical review. B./Physical review. B · 2016 · 10 citations