Gordon Callsen

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

Markus R. Wagner, Gordon Callsen, J. S. Reparaz et al. · Physical Review B · 2011 · 178 citations

Engineering, Chemistry, Electronic Excited State +22

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Felix Nippert, S. Yu. Karpov, Gordon Callsen et al. · Applied Physics Letters · 2016 · 101 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering

Patrick May, Michele Lazzeri, Pedro Venezuela et al. · Physical Review B · 2013 · 75 citations

Engineering, Graphene Nanomeshes, Graphene-based Nano-antennas +16

Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals

Christian Rauch, W. Gehlhoff, Markus R. Wagner et al. · Journal of Applied Physics · 2010 · 73 citations · Full text

Materials Science, Deep Li Acceptor, Photoluminescence +13

Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements

Gordon Callsen, J. S. Reparaz, Markus R. Wagner et al. · Applied Physics Letters · 2011 · 67 citations

Materials Science, E1 Phonon Modes, Engineering +13