Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

Markus R. Wagner, Gordon Callsen, J. S. Reparaz, +12

Physical Review B

EngineeringChemistryElectronic Excited StateDefect ToleranceElectronic Structure +20

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Felix Nippert, S. Yu. Karpov, Gordon Callsen, +7

Applied Physics Letters

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringHole LocalizationEngineering +13

Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering

Patrick May, Michele Lazzeri, Pedro Venezuela, +6

Physical Review B

EngineeringGraphene NanomeshesGraphene-based Nano-antennasOptical PropertiesTwo-dimensional Phonon Dispersion +14

Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals

Christian Rauch, W. Gehlhoff, Markus R. Wagner, +7

Journal of Applied Physics

Materials ScienceDeep Li AcceptorPhotoluminescenceEngineeringAcceptor Energy +11

Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements

Gordon Callsen, J. S. Reparaz, Markus R. Wagner, +4

Applied Physics Letters

Materials ScienceE1 Phonon ModesEngineeringPhonon Deformation PotentialsPhysics +11

A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities

Stefan T. Jagsch, Noelia Vico Triviño, Frederik Lohof, +11

Nature Communications

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Dorian Alden, Joshua S. Harris, Zachary Bryan, +8

Physical Review Applied

Aluminium NitridePoint DefectsEngineeringChemistryLuminescence Property +15

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Ronny Kirste, Marc P. Hoffmann, James Tweedie, +8

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringPhotoluminescence MeasurementsChemistry +18

Optical signature of Mg-doped GaN: Transfer processes

Gordon Callsen, Markus R. Wagner, Thomas Kure, +12

Physical Review B

Optical MaterialsEngineeringChemistryExciton TransferOptical Properties +14

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Sebastian Tamariz, Gordon Callsen, Johann Stachurski, +3

ACS Photonics