Felix Nippert

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Felix Nippert, S. Yu. Karpov, Gordon Callsen et al. · Applied Physics Letters · 2016 · 101 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Felix Nippert, Mohammad Tollabi Mazraehno, Matthew Davies et al. · Applied Physics Letters · 2018 · 69 citations

Auger Recombination, Engineering, Optoelectronic Devices +17

Tackling Disorder in γ‐Ga₂O₃

Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert et al. · Advanced Materials · 2022 · 52 citations · Full text

Germanium - the superior dopant in n-type GaN

Christian Nenstiel, M. Bügler, Gordon Callsen et al. · physica status solidi (RRL) - Rapid Research Letters · 2015 · 50 citations

Materials Science, Semiconductors, Semiconductor Technology +13

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

Filip Hjort, Johannes Enslin, Munise Cobet et al. · ACS Photonics · 2020 · 41 citations · Full text