Thomas Kure

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Felix Nippert, S. Yu. Karpov, Gordon Callsen et al. · Applied Physics Letters · 2016 · 101 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Felix Nippert, Mohammad Tollabi Mazraehno, Matthew Davies et al. · Applied Physics Letters · 2018 · 69 citations

Auger Recombination, Engineering, Optoelectronic Devices +17

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Ronny Kirste, Marc P. Hoffmann, James Tweedie et al. · Journal of Applied Physics · 2013 · 57 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Optical signature of Mg-doped GaN: Transfer processes

Gordon Callsen, Markus R. Wagner, Thomas Kure et al. · Physical Review B · 2012 · 57 citations

Optical Materials, Engineering, Chemistry +16

Germanium - the superior dopant in n-type GaN

Christian Nenstiel, M. Bügler, Gordon Callsen et al. · physica status solidi (RRL) - Rapid Research Letters · 2015 · 50 citations

Materials Science, Semiconductors, Semiconductor Technology +13