Marc P. Hoffmann

On the origin of the 265 nm absorption band in AlN bulk crystals

Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy et al. · Applied Physics Letters · 2012 · 163 citations

Natural Sciences, Materials Science, Physics +16

Two charge states of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:msub></mml:math> acceptor in GaN: Evidence from photoluminescence

M. A. Reshchikov, Mykhailo Vorobiov, D. O. Demchenko et al. · Physical review. B./Physical review. B · 2018 · 123 citations

Engineering, Materials Engineering, Materials Science +17

Polarity Control in Group-III Nitrides beyond Pragmatism

Stefan Mohn, Natalia Stolyarchuk, T. Markurt et al. · Physical Review Applied · 2016 · 118 citations · Full text

Natural Sciences, Materials Science, Physics +8

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Felix Nippert, Mohammad Tollabi Mazraehno, Matthew Davies et al. · Applied Physics Letters · 2018 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Polarity control and growth of lateral polarity structures in AlN

Ronny Kirste, Seiji Mita, Lindsay Hussey et al. · Applied Physics Letters · 2013 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17