Mykhailo Vorobiov

Two charge states of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:msub></mml:math> acceptor in GaN: Evidence from photoluminescence

M. A. Reshchikov, Mykhailo Vorobiov, D. O. Demchenko et al. · Physical review. B./Physical review. B · 2018 · 119 citations

Carbon Impurity, Charge States, Electrical Engineering +15

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

M. A. Reshchikov, Mykhailo Vorobiov, Oleksandr Andrieiev et al. · Scientific Reports · 2020 · 33 citations · Full text

The effect of annealing on photoluminescence from defects in ammonothermal GaN

M. A. Reshchikov, D. O. Demchenko, D. Ye et al. · Journal of Applied Physics · 2022 · 33 citations

Wide-bandgap Semiconductor, Gallium Vacancy, Optical Materials +17

Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

D. O. Demchenko, Mykhailo Vorobiov, Oleksandr Andrieiev et al. · Physical Review Letters · 2021 · 31 citations

Defect-related photoluminescence from ammono GaN

M. A. Reshchikov, Mykhailo Vorobiov, Karolina Grabiańska et al. · Journal of Applied Physics · 2021 · 22 citations

Electrical Engineering, Gallium Vacancy, Engineering +13