P. Drechsel

Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes

Dario Schiavon, Michael Binder, Matthias Peter et al. · physica status solidi (b) · 2012 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

Bastian Galler, P. Drechsel, R. Monnard et al. · Applied Physics Letters · 2012 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN

T. Markurt, L. Lymperakis, Jörg Neugebauer et al. · Physical Review Letters · 2013 · 75 citations

Natural Sciences, Materials Science, Physics +17

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Matteo Meneghini, M. La Grassa, Simone Vaccari et al. · Applied Physics Letters · 2014 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

S. Fritze, P. Drechsel, P. Rode et al. · Journal of Applied Physics · 2012 · 37 citations

Engineering, Materials Engineering, Materials Science +17