Bastian Galler

High mobility hydrogenated zinc oxide thin films

Diana Gaspar, L. Pereira, Kai Gehrke et al. · Solar Energy Materials and Solar Cells · 2017 · 131 citations · Full text

Natural Sciences, Materials Science, Physics +17

Identification of <i>nnp</i> and <i>npp</i> Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

Michael Binder, A. Nirschl, R. Zeisel et al. · Applied Physics Letters · 2013 · 123 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

Ilya E. Titkov, S. Yu. Karpov, Amit Yadav et al. · IEEE Journal of Quantum Electronics · 2014 · 117 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes

Dario Schiavon, Michael Binder, Matthias Peter et al. · physica status solidi (b) · 2012 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Felix Nippert, S. Yu. Karpov, Gordon Callsen et al. · Applied Physics Letters · 2016 · 102 citations

Engineering, Electrical Engineering, Materials Science +17