R. Zeisel

InAs-Al hybrid devices passing the topological gap protocol

Morteza Aghaee, Arun Akkala, Zulfi Alam et al. · Physical review. B./Physical review. B · 2023 · 185 citations · Full text

Engineering, Topological Materials, Topological Gap Protocol +16

Identification of <i>nnp</i> and <i>npp</i> Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

Michael Binder, A. Nirschl, R. Zeisel et al. · Applied Physics Letters · 2013 · 123 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +16

Role of defects in the thermal droop of InGaN-based light emitting diodes

Carlo De Santi, Matteo Meneghini, M. La Grassa et al. · Journal of Applied Physics · 2016 · 62 citations

White Oled, Quantum Science, Electrical Engineering +15

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Matteo Meneghini, M. La Grassa, Simone Vaccari et al. · Applied Physics Letters · 2014 · 58 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +17

Passivation of boron in diamond by deuterium

R. Zeisel, Christoph E. Nebel, M. Stutzmann · Applied Physics Letters · 1999 · 55 citations

Semiconductors, Boron Acceptors, Electrical Engineering +15