Eldad Bahat‐Treidel

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

Eldad Bahat‐Treidel, Frank Brunner, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2010 · 221 citations

Engineering, Electrical Engineering, Materials Science +17

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Eldad Bahat‐Treidel, Oliver Hilt, Rimma Zhytnytska et al. · IEEE Electron Device Letters · 2012 · 177 citations

Engineering, Electrical Engineering, Materials Science +17

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel et al. · IEEE Electron Device Letters · 2016 · 175 citations

Engineering, Electrical Engineering, Materials Science +17

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Isabella Rossetto, Matteo Meneghini, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2016 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner et al. · IEEE Transactions on Electron Devices · 2008 · 145 citations

Engineering, Electrical Engineering, Materials Science +17