Frank Brunner

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

Eldad Bahat‐Treidel, Frank Brunner, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2010 · 216 citations

Wide-bandgap Semiconductor, Electrical Engineering, Carbon-doped Gan +13

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner et al. · IEEE Transactions on Electron Devices · 2008 · 144 citations

Wide-bandgap Semiconductor, Punchthrough-voltage Enhancement, Electrical Engineering +12

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner et al. · IEEE Transactions on Electron Devices · 2010 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

Oliver Hilt, Frank Brunner, E. Cho et al. · 2011 · 114 citations

Wide-bandgap Semiconductor, Carbon-doped Buffer, Electrical Engineering +11

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Martin Martens, Jessica Schlegel, Patrick Vogt et al. · Applied Physics Letters · 2011 · 111 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15