Martin Martens

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Martin Martens, Jessica Schlegel, Patrick Vogt et al. · Applied Physics Letters · 2011 · 111 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

Martin Martens, Frank Mehnke, Christian Kühn et al. · IEEE Photonics Technology Letters · 2014 · 106 citations

Aluminium Nitride, Optical Materials, Engineering +23

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Xiaohang Li, Theeradetch Detchprohm, Tsung‐Ting Kao et al. · Applied Physics Letters · 2014 · 88 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

Martin Martens, Christian Kühn, Eviathar Ziffer et al. · Applied Physics Letters · 2016 · 52 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +10

The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers

Martin Martens, Christian Kühn, Tino Simoneit et al. · Applied Physics Letters · 2017 · 36 citations

Materials Science, Photonics, Mg-doped Layers +14