Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Abstract

GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</sub> = 0.43 V, high reverse blocking V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BR</sub> >; 1000 V, very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C back-barrier epitaxial structure, fully recessed Schottky anode (φ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</sub> = 0.43 eV), and slanted anode field plate in a robust and innovative process. Diode operation at elevated temperature up to 200 °C was also characterized.