Joachim Würfl

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

Eldad Bahat‐Treidel, Frank Brunner, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2010 · 216 citations

Wide-bandgap Semiconductor, Electrical Engineering, Carbon-doped Gan +13

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Eldad Bahat‐Treidel, Oliver Hilt, Rimma Zhytnytska et al. · IEEE Electron Device Letters · 2012 · 175 citations

Wide-bandgap Semiconductor, Engineering, Anode Field Plate +16

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel et al. · IEEE Electron Device Letters · 2016 · 168 citations

Wide-bandgap Semiconductor, Electrical Engineering, Bias Stress +12

Analysis of the Survivability of GaN Low-Noise Amplifiers

Matthias Rudolph, R. Behtash, Ralf Doerner et al. · IEEE Transactions on Microwave Theory and Techniques · 2007 · 155 citations

Electrical Engineering, Engineering, Stress Mechanisms +12

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner et al. · IEEE Transactions on Electron Devices · 2008 · 144 citations

Wide-bandgap Semiconductor, Punchthrough-voltage Enhancement, Electrical Engineering +12