R. Behtash

Analysis of the Survivability of GaN Low-Noise Amplifiers

Matthias Rudolph, R. Behtash, Ralf Doerner et al. · IEEE Transactions on Microwave Theory and Techniques · 2007 · 155 citations

Electrical Engineering, Engineering, Stress Mechanisms +12

AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

R. Behtash, H. Tobler, Martin Neuburger et al. · Electronics Letters · 2003 · 62 citations

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Helmut Jung, R. Behtash, J. Thorpe et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 42 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +12

20W GaN HPAs for Next Generation X-Band T/R-Modules

Patrick Schuh, R. Leberer, H. Sledzik et al. · 2006 · 32 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, Patrick Waltereit et al. · Microelectronics Reliability · 2009 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5