Helmut Jung

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Helmut Jung, R. Behtash, J. Thorpe et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Sara Martin-Horcajo, James W. Pomeroy, Benoît Lambert et al. · IEEE Electron Device Letters · 2016 · 39 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Photoluminescence in GaAs doping superlattices

Helmut Jung, Harald Künzel, G. H. Döhler et al. · Journal of Applied Physics · 1983 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Tommaso Brazzini, Michael A. Casbon, Huarui Sun et al. · Applied Physics Letters · 2015 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Industrial GaN FET technology

H. Blanck, J. Thorpe, R. Behtash et al. · International Journal of Microwave and Wireless Technologies · 2010 · 15 citations

Engineering, Electrical Engineering, Materials Science +11