Concepedia

Author

James W. Pomeroy

University of BristolORCID

Also Known As

Henry Bland, Henry Bland (7521599), J W Pomeroy, J. Pomeroy, J. W. Pomeroy, J.W Pomeroy, J.W. Pomeroy, JAMES POMEROY, James Pomeroy, James W Pomeroy

176

Publications

4.1K

Citations

36

H-Index

67

Concepts

All Affiliations

University of BristolQinetiq (United Kingdom)Bristol Robotics LaboratoryElement Six (United States)Cardiff University
JW

About

James W. Pomeroy is an author at University of Bristol specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

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3K

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Applied Physics

33

64

3K

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Natural Sciences

5

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Chemistry

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91

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Computer Science

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James W. Pomeroy

×

80

Publications

3.7K

Citations

35

H-Index

YearCitations

Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

Chao Yuan, Jiahan Li, Lucas Lindsay,

Communications Physics

2019

252

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Huarui Sun, Roland B. Simon, James W. Pomeroy,

Applied Physics Letters

2015

188

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

A. Manoi, James W. Pomeroy, N. Killat,

IEEE Electron Device Letters

2010

186

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Yan Zhou, J. Anaya, James W. Pomeroy,

ACS Applied Materials & Interfaces

2017

145

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Yan Zhou, Rajesh Ramaneti, J. Anaya,

Applied Physics Letters

2017

140

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

Martin Kuball, G.J. Riedel, James W. Pomeroy,

IEEE Electron Device Letters

2007

138

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

R. Simms, James W. Pomeroy, Michael J. Uren,

IEEE Transactions on Electron Devices

2008

124

Micro-Raman Temperature Measurements for Electric Field Assessment in Active AlGaN–GaN HFETs

S. Rajasingam, James W. Pomeroy, Martin Kuball,

IEEE Electron Device Letters

2004

98

Phonon lifetimes and phonon decay in InN

James W. Pomeroy, Martin Kuball, H. J. Lü,

Applied Physics Letters

2005

86

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

G.J. Riedel, James W. Pomeroy, K.P. Hilton,

IEEE Electron Device Letters

2009

77

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