James W. Pomeroy

Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

Chao Yuan, Jiahan Li, Lucas Lindsay et al. · Communications Physics · 2019 · 252 citations · Full text

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Huarui Sun, Roland B. Simon, James W. Pomeroy et al. · Applied Physics Letters · 2015 · 188 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

A. Manoi, James W. Pomeroy, N. Killat et al. · IEEE Electron Device Letters · 2010 · 186 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Yan Zhou, J. Anaya, James W. Pomeroy et al. · ACS Applied Materials & Interfaces · 2017 · 145 citations

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Yan Zhou, Rajesh Ramaneti, J. Anaya et al. · Applied Physics Letters · 2017 · 140 citations · Full text

Wide-bandgap Semiconductor, Bulk Pcd, Engineering +18