N. Killat

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

A. Manoi, James W. Pomeroy, N. Killat et al. · IEEE Electron Device Letters · 2010 · 186 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

N. Killat, James W. Pomeroy, T. Paskova et al. · IEEE Electron Device Letters · 2012 · 65 citations

Wide-bandgap Semiconductor, Engineering, Micro-raman Thermography +17

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Marco Silvestri, Michael J. Uren, N. Killat et al. · Applied Physics Letters · 2013 · 58 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

M. Ťapajna, N. Killat, V. Palankovski et al. · IEEE Transactions on Electron Devices · 2014 · 42 citations · Full text

Semiconductors, Hot-electron Temperature, Electrical Engineering +11

Temperature assessment of AlGaN/GaN HEMTs: A comparative study by Raman, electrical and IR thermography

N. Killat, Martin Kuball, Tso-Min Chou et al. · 2010 · 37 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17