V. Palankovski

High-temperature modeling of AlGaN/GaN HEMTs

S. Vitanov, V. Palankovski, R. Quay · Solid-State Electronics · 2010 · 147 citations

Engineering, Electrical Engineering, Materials Science +17

A temperature dependent model for the saturation velocity in semiconductor materials

R. Quay, C. Moglestue, V. Palankovski et al. · Materials Science in Semiconductor Processing · 2000 · 138 citations

Engineering, Electrical Engineering, Materials Science +14

High-temperature modeling of AlGaN/GaN HEMTs

S. Vitanov, V. Palankovski, Stephan Maroldt et al. · 2009 · 90 citations

Engineering, Electrical Engineering, Materials Science +17

Electron Mobility Model for Strained-Si Devices

S. Dhar, Hans Kosina, V. Palankovski et al. · IEEE Transactions on Electron Devices · 2005 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Study of dopant-dependent band gap narrowing in compound semiconductor devices

V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr · Materials Science and Engineering B · 1999 · 56 citations

Engineering, Materials Engineering, Materials Science +14