M. Dammann

Publications

690

Citations

H-Index

1997

Active since

Affiliations

Fraunhofer Institute for Applied Solid State Physics(Current)

Fraunhofer-Gesellschaft

NXP (Netherlands)

United Monolithic Semiconductors (Germany)

DVGW-Forschungsstelle am Engler-Bunte-Institut des Karlsruher Instituts für Technologie

M. Dammann is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, electrical engineering, and applied physics.

ORCID

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsNanoelectronicsElectronic EngineeringOptoelectronicsPower ElectronicsMaterial SciencePower Electronic Devices

Publications per year

1997–2024

Publications

70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Arnulf Leuther, A. Tessmann, M. Dammann et al. · 2003 · 46 citations

Activation Energy, Electrical Engineering, Engineering +10

Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

Patrick Waltereit, S. Müller, Konrad Bellmann et al. · Journal of Applied Physics · 2009 · 46 citations

Aluminium Nitride, Layer Thickness, Electrical Engineering +13

Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Markus Caesar, M. Dammann, V. M. Polyakov et al. · 2012 · 41 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

M. Dammann, Arnulf Leuther, Fouad Benkhelifa et al. · physica status solidi (a) · 2003 · 41 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +14

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

F. van Raay, R. Quay, Rudolf Kiefer et al. · IEEE Microwave and Wireless Components Letters · 2005 · 34 citations

Wide-bandgap Semiconductor, Mmic Device, Electrical Engineering +13

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