V. M. Polyakov - Concepedia

Author

V. M. Polyakov

Also Known As

Polyakov, Vladimir M., Scientific Сentre for Family Health and Human Reproduction Problems, V M Polyakov, V Polyakov, V. M. Polyakov, V. Polyakov, V.M Polyakov, V.M. Polyakov, Vladimir M. Polyakov, Vladimir Polyakov

114

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Technische Universität Ilmenau Fraunhofer Institute for Applied Solid State Physics University of Freiburg University of Kassel Montana State University

About

V. M. Polyakov is an author at Technische Universität Ilmenau specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	39	1.3K
2	Applied Physics	21	39	1.3K
3	Natural Sciences	4	4	202
4	Education	2	2	26
5	Medicine	2	2	26

V. M. Polyakov

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Low-field electron mobility in wurtzite InN V. M. Polyakov, Frank Schwierz Applied Physics Letters Categoryquantum ElectronicsElectrical EngineeringWurtzite InnEngineeringPhysics	2006	205
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results R. Granzner, V. M. Polyakov, Frank Schwierz, Microelectronic Engineering Device ModelingMonte Carlo ResultsElectrical EngineeringSemiconductor DeviceEngineering	2005	105
Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions Christoph Schreyvogel, V. M. Polyakov, Ralf Wunderlich, Scientific Reports	2015	77
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors Stefano Leone, R. Fornari, Matteo Bosi, Journal of Crystal Growth Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringGa2o3/gan Heterostructures	2020	63
Formation of two-dimensional electron gases in polytypic SiC heterostructures V. M. Polyakov, Frank Schwierz Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2005	61
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs R. Granzner, V. M. Polyakov, Frank Schwierz, Physica E Low-dimensional Systems and Nanostructures Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2003	60
An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs R. Granzner, Frank Schwierz, V. M. Polyakov IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringMultiple-gate MosfetsEngineering	2007	48
Low-field and high-field electron transport in zinc blende InN V. M. Polyakov, Frank Schwierz, F. Fuchs, Applied Physics Letters Electrical EngineeringEngineeringPhysicsNatural SciencesApplied Physics	2009	41
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test Markus Caesar, M. Dammann, V. M. Polyakov, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorBarrier Layer	2012	41
Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures V. M. Polyakov, Frank Schwierz, I. Cimalla, Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideEngineeringBulk GanLimited Mobility	2009	40

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