R. Granzner - Concepedia

Author

R. Granzner

Technische Universität Ilmenau ORCID

Also Known As

Granzner, Ralf, R. Granzner, Ralf Granzner

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Technische Universität Ilmenau Fraunhofer Institute for Applied Solid State Physics Slovak University of Technology in Bratislava Slovak Academy of Sciences RWTH Aachen University

About

R. Granzner is an author at Technische Universität Ilmenau specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	22	1.4K
2	Applied Physics	17	21	1.4K
3	Electrical Engineering	15	20	1.3K
4	Natural Sciences	1	1	105
5	Materials Engineering	1	1	36

R. Granzner

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Two-dimensional materials and their prospects in transistor electronics Frank Schwierz, J. Pezoldt, R. Granzner Nanoscale Graphene NanomeshesOne-dimensional MaterialElectrical EngineeringElectronic DevicesEngineering	2015	701
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results R. Granzner, V. M. Polyakov, Frank Schwierz, Microelectronic Engineering Device ModelingMonte Carlo ResultsElectrical EngineeringSemiconductor DeviceEngineering	2005	105
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs R. Granzner, V. M. Polyakov, Frank Schwierz, Physica E Low-dimensional Systems and Nanostructures Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2003	60
Graphene Nanoribbons for Electronic Devices Zhansong Geng, Bernd Hähnlein, R. Granzner, Annalen der Physik NanosheetEngineeringGraphene Nanoribbon MosfetsNanodevicesGraphene Nanoribbons Devices	2017	56
An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs R. Granzner, Frank Schwierz, V. M. Polyakov IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringMultiple-gate MosfetsEngineering	2007	48
Subthreshold behavior of triple-gate MOSFETs on SOI material Max C. Lemme, T. Mollenhauer, W. Henschel, Solid-State Electronics Triple-gate MosfetsEngineeringApplied PhysicsMicroelectronicsSemiconductor Device	2003	46
Theoretical Investigation of Trigate AlGaN/GaN HEMTs Mohamed Alsharef, R. Granzner, Frank Schwierz IEEE Transactions on Electron Devices Wide-bandgap SemiconductorHigh-electron Mobility TransistorElectrical EngineeringEngineeringAl Content	2013	45
Simulation of 50-nm Gate Graphene Nanoribbon Transistors Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner, Electronics Device ModelingGraphene NanomeshesElectrical EngineeringEngineeringPhysics	2016	42
Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method K. Köhler, S. Müller, R. Aidam, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsEngineering	2010	36
Side-gate graphene field-effect transistors with high transconductance Bernd Hähnlein, Benjamin Händel, J. Pezoldt, Applied Physics Letters Graphene NanomeshesElectrical EngineeringElectronic DevicesSide-gate Graphene FetEngineering	2012	35

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