Graphene Nanoribbons for Electronic Devices

Abstract

Abstract Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application‐oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types – graphene nanoribbon MOSFETs, side‐gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon‐based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that – in spite of the remarkable progress achieved during the past 10 years – graphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.