On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs - Concepedia

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On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

60

Citations

10

References

2003

Year

R. Granzner, V. M. Polyakov, Frank Schwierz, M. Kittler, Theodor Doll

Physica E Low-dimensional Systems and Nanostructures

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsBias Temperature InstabilityHd ModelsApplied PhysicsNanometer Double-gate MosfetsMicroelectronicsCircuit Simulation

References

	Year	Citations

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